N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

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STMICROELECTRONICS

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N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 Rg and UIS Tested APPLICATIONS • CCFL Inverter

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VBSEMI

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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N-Channel Enhancement Mode Power MOSFET

General Features | © Vos =60VIo 7A | Rosin

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TECHPUBLIC

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N沟道60V - 0.017 Ohm - 7.5A SO-8 STripFET™ II MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature SizeTM\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma • TYPICAL RDS(on) = 0.017 Ω \n• LOW THRESHOLD DRIVE \n• STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY;

ST

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