LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

文件：225.97 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

低压快速切换NPN功率晶体管

The device is manufactured in NPN Planar Technology by using a \\\"Base Island\\\" layout.\n\n The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage • VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE \n• FAST-SWITCHING SPEED \n• HIGH CURRENT GAIN CHARACTERISTIC;

ST

意法半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5A TO92-3

STMICROELECTRONICS

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

文件：225.97 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5A TO92AP

STMICROELECTRONICS

意法半导体