Dual N-channel 30V - 0.012Y - 9A SO-8

This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 pack Optimal R\nDS(on) x Qg trade-off @ 4.5V\nSwitching losses reduced\nConduction losses reduced;

ST

意法半导体

Dual N-channel 30 V - 0.012 廓 - 9 A - SO-8 low on-resistance STripFET??Power MOSFET

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STMICROELECTRONICS

意法半导体

SOP8

ST

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N/A

ST

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QFP-48

ST

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