HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

Description The device is manufactured in low voltage PNP Planar Technology with Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (h

文件：142.49 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

High gain low voltage PNP power transistor

文件：147.31 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High gain low voltage PNP power transistor

文件：147.31 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

高增益低压PNP功率晶体管

The device is manufactured in low voltage PNP Planar Technology with \\\"Base Island\\\" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. • Very low collector to emitter saturation voltage \n• 3 A continuous collector current (IC) \n• DC current gain > 100 (hFE);

ST

意法半导体

Package：SOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A SOT23-6L

STMICROELECTRONICS

意法半导体