N沟道20 V、0.025 Ohm典型值、5 A STripFET(TM) V功率MOSFET，SOT23-6L封装

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. • Very low profile package \n• Conduction losses reduced \n• Switching losses reduced \n• 2.5 V gate drive \n• Very low threshold device;

ST

意法半导体

丝印：STD1；Package：SOT-26；Very low threshold device

文件：845.03 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

ST
TO-252

ST

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ST
TO-220

ST

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ST/意法
TO-220

ST/意法

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