N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：590.88 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.73 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

Infrared Transceiver Module (SIR, 115.2 kbit/s)

文件：396.76 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package

DESCRIPTION TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16° • Low

文件：80.98 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

PIN DIODE

DESCRIPTION The UM4300 and UM7300 series combine a diode chip of extremely thick intrinsic region with a low thermal resistance construction. This results in diodes uniquely applicable to very low distortion linear attenuators and specialized functions. The UM4300 series, with large cross-section

文件：209.99 Kbytes 页数：4 Pages

MICROSEMI

美高森美