Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：133.07 Kbytes 页数：7 Pages

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Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：443.27 Kbytes 页数：8 Pages

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Power Rectifier, Ultra-Fast Recovery, 2 A, 150 V

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Autom

文件：181.74 Kbytes 页数：6 Pages

ONSEMI

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18W BTL x 3CH AUDIO POWER AMPLIFIER

文件：483.32 Kbytes 页数：11 Pages

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18W BTL x 3CH AUDIO POWER AMPLIFIER

文件：483.32 Kbytes 页数：11 Pages

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东芝