N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh??POWER MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：223.55 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：562.5 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET

ST

意法半导体

N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：474.65 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体