Dual N-channel 30 V, 0.0155 廓, 10 A, SO-8 STripFET??V Power MOSFET

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STMICROELECTRONICS

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N-Channel 0-V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

双路N沟道30 V、0.0155 Ohm典型值、10 A STripFET(TM) V功率MOSFET，SO-8封装

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. • RDS(on) * Qg industry benchmark \n• Very low switching gate charge \n• Extremely low on-resistance RDS(on) \n• Low gate drive power losses \n• High avalanche ruggedness;

ST

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