650 V, 12 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：552.56 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC12G065D；Package：TO-220AC；650 V, 12 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：552.56 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 12 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

文件：558.71 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 12 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

文件：558.71 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体