1200V, 15A, silicon carbide power Schottky Diode

This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and • No or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high voltage periphery \n• Operating Tj from -40 °C to 175 °C \n• Low VF \n• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. \n• ECOPACK2 compliant;

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意法半导体

丝印：SC15H12G2；Package：D2PAKHV；1200 V, 15 A, silicon carbide power Schottky diode

文件：375.36 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V, 15A, SILICON CARBIDE POWE

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 15 A, silicon carbide power Schottky diode

文件：379.59 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体