P-CHANNEL 55V - 0.016 ohm - 80A TO-220 STripFET??II POWER MOSFET

Description These Power MOSFETs are the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarka

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STMICROELECTRONICS

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-220 and TO-263 Package.

文件：231.8 Kbytes 页数：8 Pages

SAMHOP

三合微科

丝印：85N15F4；Package：TO-220；N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

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STMICROELECTRONICS

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丝印：85N15F4；Package：TO-220；N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gat

文件：437.6 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gat

文件：437.6 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. F

文件：376.17 Kbytes 页数：16 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronics unique “ Single Feature Size” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives

文件：264.4 Kbytes 页数：9 Pages

STMICROELECTRONICS

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N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：376.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.8 Kbytes 页数：2 Pages

ISC

无锡固电