Bi-Directional Triode Thyristor

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SEMIWELL

矽门微

Bi-Directional Triode Thyristor

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Bi-Directional Triode Thyristor

SemiWell

矽门微

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 600 V) • Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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TOSHIBA

东芝

Bi-Directional Triode Thyristor

文件：344 Kbytes 页数：5 Pages

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司