isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 55 V, 0.0064 , 90 A, TO-220 STripFET DeepGATE Power MOSFET

文件：526.47 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：972.49 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. Exceptional dv/dt capability\nExtremely low on-resistance R\nDS(on)\n100% avalanche tested;

ST

意法半导体