| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STP9NM60N | isc N-Channel MOSFET Transistor FEATURES •DrainCurrent–ID=6.5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
STP9NM60N | N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STP9NM60N | N-Channel 650V (D-S) Power MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
STP9NM60N
- 功能描述：
MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2024+实力库存 |
TO-220 |
2983 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
6007 |
原装正品现货 可开增值税发票 |
询价 | ||
STMicroelectronics |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ST |
22+23+ |
TO-220 |
27091 |
绝对原装正品全新进口深圳现货 |
询价 | ||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
ST |
2020+ |
TO-220 |
31340 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
ST/意法 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
询价 | ||
STM原厂目录 |
23+ |
TO-220 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
ST/意法 |
22+ |
TO-220 |
360000 |
进口原装房间现货实库实数 |
询价 |
相关规格书
更多- STPA001
- ST-PA2
- ST-PA6
- STPAC01
- STPAC01F2
- STPAC02F1
- ST-PBR4
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- STPCI0166BTC3
- STPCI0180BTI3
- STPCI2GDYIE
- STPCI2HEYI
- STP-CN05
- STP-CNB04
- STP-CNL04
- STPCTG1MBRD
相关库存
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- STPAC01F1
- STPAC01F2_08
- STP-BB-UA
- STP-BVL10
- STPC0310BTI3
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- STPC12HDYC
- STPC12HEYC
- STPC1MBBL
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- STPC4EDBC
- STPC4EEBC
- STPC4HDBC
- STPC4HEBC
- STPCA1EAYC
- STPCC01
- STPCC0166BTI3
- STPCC0375BTC3
- STPCC5HEBC
- STPCC5HEBI
- STPCD0166BTI3
- STPCD0175BTI3
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- STPCI0180BTC3
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- STP-CN04
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- STP-CNB05
- STPCTG1MBBL
- STPCTG2MBRD
