isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION

文件：326.4 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET

ST

意法半导体

600 V - 8 A - short circuit rugged IGBT

文件：562.01 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

600 V - 8 A - short circuit rugged IGBT

文件：562.01 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION

文件：326.4 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体