600 V - 8 A - short circuit rugged IGBT

文件：562.01 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

600 V - 8 A - short circuit rugged IGBT

文件：562.01 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

最新短路保护“K”系列

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. • Lower on voltage drop (VCE(sat)) \n• Very soft ultra fast recovery antiparallel diode \n• Lower CRES / CIES ratio (no cross-conduction susceptibility) \n• Short circuit withstand time 10µs;

ST

意法半导体

8 A, 600 V short-circuit rugged IGBT

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. • Lower on voltage drop (VCE(sat)) \n• Lower Cres / Cies ratio (no cross-conduction susceptibility) \n• Very soft ultra-fast recovery antiparallel diode \n• Short-circuit withstand time 10 μs;

ST

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 15A 62W DPAK

STMICROELECTRONICS

意法半导体