STGD8NC60KD

600 V - 8 A - short circuit rugged IGBT

STGD8NC60KDT4

600 V - 8 A - short circuit rugged IGBT

STGD8NC60KDT4

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 15A 62W DPAK

STGF8NC60KD

600V-8A-shortcircuitruggedIGBT

STGF8NC60KD

N-channel600V-4A-TO-220FPShortcircuitratedPowerMESH??IGBT

STGP8NC60K

N-channel600V-8A-D2PAK/DPAK/TO-220ShortcircuitratedPowerMESHIGBT

STGP8NC60KD

IGBT

DESCRIPTION ·Loweronvoltagedrop(VCE(sat)) ·Verysoftultrafastrecoveryantiparalleldiode APPLICATIONS ·Highfrequencymotorcontrols ·SMPSandPFCinbothhardswitchandresonanttopologies ·Motordrives

STGP8NC60KD

600V-8A-shortcircuitruggedIGBT

STP8NC60

N-CHANNEL600V-0.85ohm-7ATO-220/TO-220FPPowerMesh?줚IMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.Thelayoutre finementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. APPLICATION

STP8NC60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.