isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 790mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

文件：319.76 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500 V, 0.73 廓 typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.16474 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages

文件：1.16474 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.73 Ohm、5 A MDmesh(TM) II功率MOSFET，TO-220封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体