isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 850V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：346.66 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：346.66 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 850V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：346.66 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体