isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 790mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

文件：319.76 Kbytes 页数：2 Pages

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N-channel 500 V, 0.73 廓 typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.16474 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：P8NM60；Package：TO-220；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件：558.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 8A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching applic

文件：319.99 Kbytes 页数：2 Pages

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N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：603.7 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：489.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.42 Kbytes 页数：2 Pages

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N-CHANNEL 600V - 0.9廓 - 8A - TO-220/D2PAK Fast Diode MDmesh??Power MOSFET

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters General features ■ High dv/dt and avalanche capabilities

文件：735.3 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：P8NM60FP；Package：TO-220FP；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件：558.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：489.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体