isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 8A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching applic

文件：311.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件：603.7 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

文件：492.5 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.44 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.7Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

文件：320.51 Kbytes 页数：2 Pages

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无锡固电

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body

文件：727.53 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：329.07 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：329.07 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体