isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.44 Kbytes 页数：2 Pages

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N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：320.39 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 98A@ TC=25℃ ·Drain Source Voltage -VDSS= 68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.78 Kbytes 页数：2 Pages

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无锡固电

N-channel 68 V, 0.0082 廓, 98 A, TO-220 STripFET??II Power MOSFET

Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Features ■ Excep

文件：429.59 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.49 Kbytes 页数：2 Pages

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N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：368.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

文件：90.82 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest

文件：115.44 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

P-channel 55V - 0.016廓 - 80A - TO-220 - D2PAK STripFET??II Power MOSFET

Description This Power MOSFET is the laest development of STMicroelectronics unique “Single feature size™”strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：251.01 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage : VDSS= -55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：326.86 Kbytes 页数：2 Pages

ISC

无锡固电