丝印：85N15F4；Package：D2PAK；N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

文件：555.97 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：85N15F4；Package：H2PAK；N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gat

文件：437.6 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：85N15F4；Package：TO-220；N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

文件：555.97 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：85N15F4；Package：TO-220；N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gat

文件：437.6 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体