丝印：860N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 21.1 m, 33 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H860NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：210.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：860N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 21.1 m, 33 A

文件：208.39 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

POWER DIODE

文件：1.13733 Mbytes 页数：5 Pages

IRI

POWER DIODE

文件：1.13733 Mbytes 页数：5 Pages

IRI

POWER DIODE

文件：1.13733 Mbytes 页数：5 Pages

IRI

POWER DIODE

文件：1.13733 Mbytes 页数：5 Pages

IRI