N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable m

文件：75.41 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.52 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable m

文件：75.41 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体