N-channel Power MOSFETs developed using the second generation of MDmesh

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：966.35 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：319.98 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道500 V、0.135 Ohm典型值、21 A MDmesh(TM) II功率MOSFET，TO-220封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

isc N-Channel MOSFET Transistor

文件：397.87 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Power MOSFETs developed using the second generation of MDmesh

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：966.35 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体