isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.33 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 3.2Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS

文件：199.7 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

2A, 600V NChannel MOSFET

GENERAL DESCRIPTION SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRin™ structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to mini

文件：385.77 Kbytes 页数：6 Pages

SILAN

士兰微

N-Channel MOSFET uses advanced trench technology

文件：1.7999 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件：1.08793 Mbytes 页数：9 Pages

VBSEMI

微碧半导体