isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.34 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI

文件：202.62 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.37539 Mbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFET

文件：2.12055 Mbytes 页数：9 Pages

VBSEMI

微碧半导体