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STP2N80K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:371.9 Kbytes 页数:2 Pages

ISC

无锡固电

STP2N80K5

丝印:2N80K5;Package:TO-220;N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件:1.63181 Mbytes 页数:23 Pages

STMICROELECTRONICS

意法半导体

STP2N80K5

N沟道800 V、3.5 Ohm典型值、2 A MDmesh K5功率MOSFET,TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

STU2N80K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:317.41 Kbytes 页数:2 Pages

ISC

无锡固电

STU2N80K5

N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件:1.63181 Mbytes 页数:23 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    TO-220AB

  • Grade:

    Industrial

  • VDSS(V):

    800

  • RDS(on)_max(@ VGS=10V)(Ω):

    4.5

  • Drain Current (Dc)_max(A):

    2

  • PTOT_max(W):

    110

  • Qg_typ(nC):

    3

供应商型号品牌批号封装库存备注价格
MICROCHIP/微芯
25+
TO-220-3(TO-220AB)
32360
MICROCHIP/微芯全新特价STP2N80K5即刻询购立享优惠#长期有货
询价
ST(意法半导体)
24+
TO-220
8498
支持大陆交货,美金交易。原装现货库存。
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
STM
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST
23+
TO-220
50000
全新原装正品现货,支持订货
询价
ST/意法半导体
24+
TO-220-3
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
21+
TO-220-3
8860
只做原装,质量保证
询价
ST
22+
TO2203
9000
原厂渠道,现货配单
询价
ST/意法半导体
2020+
TO-220-3
7600
只做原装正品,卖元器件不赚钱交个朋友
询价
更多STP2N80K5供应商 更新时间2025-10-4 14:14:00