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STP30NE06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) =0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:371.9 Kbytes 页数:2 Pages

ISC

无锡固电

STP30NE06

N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics a

文件:48.21 Kbytes 页数:6 Pages

STMICROELECTRONICS

意法半导体

STP30NE06

N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

ST

意法半导体

STP30NE06FP

N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics a

文件:48.21 Kbytes 页数:6 Pages

STMICROELECTRONICS

意法半导体

STP30NE06FP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) =0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.82 Kbytes 页数:2 Pages

ISC

无锡固电

STP30NE06L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) =0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:371.74 Kbytes 页数:2 Pages

ISC

无锡固电

STP30NE06L

N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re

文件:105.43 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

STP30NE06LFP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) =0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.66 Kbytes 页数:2 Pages

ISC

无锡固电

STP30NE06LFP

N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re

文件:105.43 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

STP30NE06L

N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

ST

意法半导体

详细参数

  • 型号:

    STP30NE06

  • 功能描述:

    MOSFET RO 511-STP36NF06

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
24+
TO-220
10800
询价
STMICROELEC
24+
32488
原装现货假一罚十
询价
ST
24+
TO-220
15000
原装现货热卖
询价
ST
17+
TO-220
6200
询价
ST
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
23+
TO-220
10000
专做原装正品,假一罚百!
询价
ST全系列
25+23+
TO-220
26114
绝对原装正品全新进口深圳现货
询价
ST-MAR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
ST
22+
TO-220
6000
十年配单,只做原装
询价
ST
19+
TO-220
25000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多STP30NE06供应商 更新时间2026-4-21 15:30:00