2A, 600V NChannel MOSFET

GENERAL DESCRIPTION SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRin™ structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to mini

文件：385.77 Kbytes 页数：6 Pages

SILAN

士兰微

2A, 600V N-Channel MOSFET

GENERAL DESCRIPTION\nSVD2N60T is an N-channel enhancement mode power MOS field effect  transistor  which  is  produced  using  Silan  proprietary SRin™ structure DMOS technology. The improved planar stripe cell and  the  improved  guarding  ring  terminal  have  been  especially tailored to minimize *  2A,600V,RDS(on)(typ.)=4.0W@VGS=10V\n*  Low gate charge\n*  Low Crss\n*  Fast switching\n*  Improved dv/dt capability;

Silan

士兰微

N-Channel MOSFET uses advanced trench technology

文件：1.7999 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件：1.08793 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.

文件：510.09 Kbytes 页数：6 Pages

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