isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.9 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 0.0024 廓, 120 A STripFET??VI DeepGATE??Power MOSFET in TO-220 and I짼PAK packages

文件：756 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.\n • Low gate charge\n• Very low on-resistance• High avalanche ruggedness;

ST

意法半导体

N-channel 60 V, 0.0024 廓, 80 A STripFET??VI DeepGATE?? Power MOSFET in I짼PAKFP package

文件：658.08 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 0.0024 廓, 120 A STripFET??VI DeepGATE??Power MOSFET in TO-220 and I짼PAK packages

文件：756 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体