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STGD7NB60M

N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT

nHIGHINPUTIMPEDANCE nLOWON-VOLTAGEDROP(Vcesat) nOFFLOSSESINCLUDETAILCURRENT nLOWGATECHARGE nHIGHCURRENTCAPABILITY nHIGHFREQUENCYOPERATION nCO-PACKAGEDWITHTURBOSWITCH™ ANTIPARALLELDIODE DESCRIPTION Usingthelatesthighvoltagetechnologybasedona patentedstr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGD7NB60MT4

N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT

nHIGHINPUTIMPEDANCE nLOWON-VOLTAGEDROP(Vcesat) nOFFLOSSESINCLUDETAILCURRENT nLOWGATECHARGE nHIGHCURRENTCAPABILITY nHIGHFREQUENCYOPERATION nCO-PACKAGEDWITHTURBOSWITCH™ ANTIPARALLELDIODE DESCRIPTION Usingthelatesthighvoltagetechnologybasedona patentedstr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GB7NB60KD

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GD7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GD7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GF7NB60SL

N-CHANNEL7A-600V-TO-220FPPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60F

N-CHANNEL7A-600V-T0-220/DPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixFidentifiesafamilyoptimizedtoachieveverylowswitchingswitchingtimesfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60KD

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60KDFP

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P7NB60

N-CHANNELENHANCEMENTMODEPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB7NB60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STB7NB60

N-CHANNEL600V-1.0OMH-7.2A-I2PAK/D2PAKPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60FD

N-CHANNEL7A-600VTO-220/D2PAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixFidentifiesafamilyoptimizedtoachieveverylowswitchingswitchingtimesfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60HD

N-CHANNEL7A-600VDPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESHIGBTs,withoutstandingperfomances.Thesuffix”H”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforhighfrequ

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60KD

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60KD

N-CHANNEL7A-600V-TO-220/FP/DPAK/D2PAKPowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGD7NB60F

N-CHANNEL7A-600V-T0-220/DPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixFidentifiesafamilyoptimizedtoachieveverylowswitchingswitchingtimesfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGD7NB60H

N-CHANNEL7A-600V-DPAKPowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixHidentifiesafamilyoptimizedforhighfrequencyapplications(upto50kHz)inord

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STGD7NB60M

  • 功能描述:

    IGBT 晶体管 N-Ch 600 Volt 7 Amp

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
原厂原封
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
08+(pbfree)
TO252DPAK
8866
询价
ST全系列
22+23+
DPAK
26278
绝对原装正品全新进口深圳现货
询价
ST
1926+
DPAK
6852
只做原装正品现货!或订货假一赔十!
询价
ST
2019
TO-252-2
55000
原装正品现货假一赔十
询价
ST
23+
TO252DPAK
35628
全新原装真实库存含13点增值税票!
询价
ST
2020+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
STM原厂目录
23+
DPAK
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
ST
20+
TO-252
25000
全新原装现货,假一赔十
询价
ST/意法
18+PBF
TO-252-2
664
就找我吧!--邀您体验愉快问购元件!
询价
更多STGD7NB60M供应商 更新时间2024-6-23 17:08:00