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STGB50H65FB2中文资料Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package数据手册ST规格书
STGB50H65FB2规格书详情
描述 Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
特性 Features
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
技术参数
- 制造商编号
：STGB50H65FB2
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VCES_max(V)
：650
- PTOT_max(W)
：272
- Freewheeling diode
：false
- IC_max(@ Tc=25°C)(A)
：86
- IC_max(@ Tc=100°C)(A)
：53
- VCE(sat)_typ(V)
：1.55
- Qg_typ(nC)
：151
- Eon_typ(mJ)
：0.91
- Eoff_typ(mJ)
：0.58
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
Si |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
Si |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
24+ |
Si |
16900 |
原装，正品 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
21+ |
Si |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
23+ |
Si |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
23+ |
Si |
6000 |
我们只做原装正品,支持检测。 |
询价 | ||
ST/意法半导体 |
2021+ |
Si |
7600 |
原装现货，欢迎询价 |
询价 | ||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
询价 |
