丝印：G50H65FB2；Package：D2PAK；Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D²PAK package

Features • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • Welding • Power factor correction • UPS • Solar in

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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. T • Maximum junction temperature: TJ = 175 °C \n• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A \n• Minimized tail current \n• Tight parameter distribution \n• Low thermal resistance \n• Positive VCE(sat) temperature coefficient;

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