STD4LN80K5

Marking：4LN80K5；Package：DPAK；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a DPAK package

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultralowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

STD4N20

N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STD4N25

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■TYPICALRDS(on)=0.7Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-MOUNTINGDPAK(TO-252)POWERPACKAGEINTAPE&

STD4N52K3

N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STD4N52K3

N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STD4N52K3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=2.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD4N80K5

Marking：4N80K5；Package：DPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STD4NA40

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■TYPICALRDS(on)=1.7Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX-1) ■SURFACE-MOUNTINGDPAK(TO-252)POWERPACKAGEINTAPE&REEL(SUFFIX

STD4NB25

N - CHANNEL 250V - 0.95ohm - 4A - DPAK/IPAK PowerMESHO MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STD4NB40

N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera