N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：235.04 Kbytes 页数：8 Pages

SAMHOP

三合微科

P-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Suface Mount Package.

文件：121.96 Kbytes 页数：10 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES • Super high dense cell design for low RDS(ON). • Rugged and reliable. • TO251 and TO252 Package.

文件：889.39 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO251 and TO 252 Package.

文件：770.44 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：944.95 Kbytes 页数：9 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：140.37 Kbytes 页数：10 Pages

SAMHOP

三合微科

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

文件：1.17964 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.011 ohm - 45A DPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：47.92 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：477.04 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：477.04 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体