N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

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STMICROELECTRONICS

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N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：449.66 Kbytes 页数：10 Pages

STMICROELECTRONICS

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丝印：4NK100Z；Package：DPAK；Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technol

文件：440.2 Kbytes 页数：15 Pages

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Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technol

文件：440.2 Kbytes 页数：15 Pages

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N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：664.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：664.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：671.69 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：664.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET

Description The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology. ■ 100 avalanche tested ■ Extremely high dv/dt capabili

文件：893.9 Kbytes 页数：17 Pages

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N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET

Description The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology. ■ 100 avalanche tested ■ Extremely high dv/dt capabili

文件：893.9 Kbytes 页数：17 Pages

STMICROELECTRONICS

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