Automotive-grade P-channel -80 V, 18.5 m typ., -40 A STripFETTM F6 Power MOSFET in a DPAK package

Features  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new tre

文件：723.08 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：365.45 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● TO-252 and TO-251 Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● ESD Protected.

文件：249.46 Kbytes 页数：8 Pages

SAMHOP

三合微科

P-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Suface Mount Package. ● ESD Protected.

文件：251.22 Kbytes 页数：8 Pages

SAMHOP

三合微科

P-Channel Logic Level EnhancementMode Field E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Procteced

文件：379.7 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：940.84 Kbytes 页数：9 Pages

SAMHOP

三合微科

P -Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：498.47 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：175.07 Kbytes 页数：9 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：196.04 Kbytes 页数：9 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：897.29 Kbytes 页数：9 Pages

SAMHOP

三合微科