Automotive-grade P-channel -80 V, 18.5 m typ., -40 A STripFETTM F6 Power MOSFET in a DPAK package

Features  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new tre

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STMICROELECTRONICS

意法半导体

汽车级P沟道-80 V、18.5 mOhm典型值、-40 A STripFET F6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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