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STD4NK50ZT4

N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件:671.69 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z

N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件:578.96 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件:970.81 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z

N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to

文件:759 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z-1

N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to

文件:759 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z-1

丝印:D4NK60Z;Package:IPAK;N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件:731.33 Kbytes 页数:32 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z-1

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件:970.81 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

STD4NK60Z-1

N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件:578.96 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STD4NK60ZT4

丝印:D4NK60Z;Package:DPAK;N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件:731.33 Kbytes 页数:32 Pages

STMICROELECTRONICS

意法半导体

STD4NK60ZT4

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件:970.81 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • IF(AV)(A):

    40(2×20)

  • VRRM(V):

    100

  • VF(V):

    0.65

  • IR(uA):

    20

  • IFSM(A):

    250

  • Package:

    TO-220

供应商型号品牌批号封装库存备注价格
ST
25+
TO-252
2890
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
24+
N/A
1530
询价
ST
2016+
TO252
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
TO-251
100
正品原装--自家现货-实单可谈
询价
ST
23+
SOT252
10000
原装正品,假一罚十
询价
ST
24+
原厂原封
6523
进口原装公司百分百现货可出样品
询价
ST
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
ST
24+
TO-252(2引线+接
994
原装现货假一罚十
询价
ST
16+
TO251
25
全新原装现货
询价
ST
05+
TO-252
8000
原装进口
询价
更多STD4供应商 更新时间2026-4-17 13:57:00