丝印：4NK100Z；Package：DPAK；Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technol

文件：440.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Very low intrinsic capacitance

文件：765.06 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technol

文件：440.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道1000 V、5.6 Ohm典型值、2.2 A有齐纳管保护的SuperMESH功率MOSFET，DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • AEC-Q101 qualified \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体