丝印：4LN80K5；Package：DPAK；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a DPAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

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STMICROELECTRONICS

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丝印：4LN80K5；Package：TO-220FP；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：719.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：4LN80K5；Package：TO-220；N-channel 800 V, 2.1 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) * area  Industry’s best figure of merit (FoM)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：718.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体