丝印：4LN80K5；Package：TO-220FP；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

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STMICROELECTRONICS

意法半导体

N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，TO-220FP封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) * area \n• Industry’s best FoM (figure of merit) \n• Ultra low-gate charge \n• 100% avalanche tested \n• Zener-protected;

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N-channel 800 V, 2.1 廓 typ., 3 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

文件：682 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 2.1 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) * area  Industry’s best figure of merit (FoM)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：718.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体