丝印：4LN80K5；Package：DPAK；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a DPAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

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STMICROELECTRONICS

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N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，DPAK封装

这款超高压N-沟道功率MOSFETs 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。 • 业界领先的低 RDS(on) x 面积 \n• 业界出色的品质因数（FoM） \n• 极低的栅极电荷 \n• 经过100％雪崩测试 \n• 稳压保护;

ST

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N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：719.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 800 V, 2.1 廓 typ., 3 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

文件：682 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-channel 800 V, 2.1 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) * area  Industry’s best figure of merit (FoM)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：718.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

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