N-Channel MOSFET

FEATURES ·Drain Current -ID= 2.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V APPLICATIONS ·ATX and Gaming Power Supplies ·Switch Supplies ·Synchronous Rectification in SMPS

文件：332.9 Kbytes 页数：2 Pages

ISC

无锡固电

P-channel 500 V, 3 廓 typ., 2.8 A Zener-protected SuperMESH??Power MOSFET in a DPAK package

文件：740.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

P-channel 500 V, 3 Ohm, 2.8 A DPAK, Zener-protected SuperMESH Power MOSFET

This high-voltage device is a Zener-protected P-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt c Gate charge minimized\nExtremely high dv/dt capability\n100% avalanche tested\nVery low intrinsic capacitance\nImproved ESD capability;

ST

意法半导体

TO-252

ST

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TO-252-3

ST

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