首页 >STD5NM60-1>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
STD5NM60-1 | N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt 文件:603.7 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STD5NM60-1 | N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt 文件:489.18 Kbytes 页数:16 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STD5NM60-1 | 丝印:D5NM60;Package:IPAK;N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The 文件:558.91 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STD5NM60-1 | N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK 文件:561.24 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STD5NM60-1 | 丝印:DPAK;Package:TO-252;isc N-Channel MOSFET Transistor 文件:324.41 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
STD5NM60-1 | N-Channel 600 V, 0.9 Ohm typ., 5 A MDmesh Power MOSFET in an IPAK package This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using S • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance; | ST 意法半导体 | ST |
详细参数
- 型号:
STD5NM60-1
- 功能描述:
MOSFET N-Ch 600 Volt 5 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
TO251 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
ST |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
询价 | ||
ST专家 |
2021+ |
IPAK |
6800 |
原厂原装,欢迎咨询 |
询价 | ||
ST/意法 |
13+ |
TO-251 |
3000 |
只做原装正品 |
询价 | ||
ST/意法 |
21+ |
TO-251-3 |
60000 |
绝对原装正品现货,假一罚十 |
询价 | ||
ST(意法半导体) |
24+ |
TO-251 |
7845 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST |
2016+ |
TO-251 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
STM |
24+/25+ |
IPAK(TO-251) |
14095 |
原装正品现货库存价优 |
询价 | ||
ST |
23+ |
原盒原包装 |
33000 |
全新原装假一赔十 |
询价 |
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