首页 >STD5NM60-1>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

STD5NM60-1

N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件:603.7 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

STD5NM60-1

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

文件:489.18 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STD5NM60-1

丝印:D5NM60;Package:IPAK;N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件:558.91 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STD5NM60-1

N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

文件:561.24 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STD5NM60-1

丝印:DPAK;Package:TO-252;isc N-Channel MOSFET Transistor

文件:324.41 Kbytes 页数:2 Pages

ISC

无锡固电

STD5NM60-1

N-Channel 600 V, 0.9 Ohm typ., 5 A MDmesh Power MOSFET in an IPAK package

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using S • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

详细参数

  • 型号:

    STD5NM60-1

  • 功能描述:

    MOSFET N-Ch 600 Volt 5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
24+
TO251
8950
BOM配单专家,发货快,价格低
询价
ST
2021+
原厂原封装
93628
原装进口现货 假一罚百
询价
ST专家
2021+
IPAK
6800
原厂原装,欢迎咨询
询价
ST/意法
13+
TO-251
3000
只做原装正品
询价
ST/意法
21+
TO-251-3
60000
绝对原装正品现货,假一罚十
询价
ST(意法半导体)
24+
TO-251
7845
支持大陆交货,美金交易。原装现货库存。
询价
ST/意法
2450+
TO-251
9850
只做原装正品现货或订货假一赔十!
询价
ST
2016+
TO-251
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
STM
24+/25+
IPAK(TO-251)
14095
原装正品现货库存价优
询价
ST
23+
原盒原包装
33000
全新原装假一赔十
询价
更多STD5NM60-1供应商 更新时间2025-10-4 16:36:00