P沟道40 V、0.0125 Ohm典型值、46 A STripFET F6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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丝印：46P4LLF6；Package：DPAK；P-channel 40 V, 0.0125 廓 typ., StripFET??F6 Power MOSFET in a DPAK package

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STMICROELECTRONICS

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