N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET

文件：249.59 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Extremely high dv/dt capability

文件：1.17547 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道525 V、1 Ohm典型值、5 A MDmesh K3功率MOSFET，DPAK封装

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

Extremely high dv/dt capability

文件：1.17547 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET

文件：249.59 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 1.2Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.56 Kbytes 页数：2 Pages

ISC

无锡固电