isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

文件：672.14 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET

文件：562.69 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d

文件：545.74 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET

文件：562.69 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

文件：672.14 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：316.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体